ROHM N-Channel MOSFET, 39 A, 100 V Enhancement, 8-Pin HSMT RQ3P300BHTB1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
235-2774
제조사 부품 번호:
RQ3P300BHTB1
제조업체:
ROHM
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

39 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

8

Package Type

HSMT

Automotive Standard

No

Forward Voltage (Vf)

1.2 V

Height

3.4 mm

Length

3.15 mm

Maximum Drain Source Resistance (Rds)

15.5 mΩ

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

2 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

36 nC

Width

850 μm

The ROHM N channel power MOSFET with low on state resistance has drain to source voltage of 100 V. It is Ideal for switching purpose.

Small surface mount package

Pb-free lead plating

RoHS compliant

관련된 링크들