STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247
- RS 제품 번호:
- 230-0094P
- 제조사 부품 번호:
- SCTWA60N120G2-4
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
₩577,600.00
일시적 품절
- 2027년 4월 09일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 10 - 99 | ₩57,760.00 |
| 100 - 249 | ₩56,040.00 |
| 250 + | ₩54,920.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 230-0094P
- 제조사 부품 번호:
- SCTWA60N120G2-4
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Height 21.1mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
관련된 링크들
- RS PRO Steel Perforated DIN Rail, Top Hat Compatible, 500mm x 35mm x 7.5mm
- 6EP3334-8SB00-0AY0 | Siemens SITOP PSU8200 Switched Mode DIN Rail Power Supply, 120 → 230V ac ac Input, 24V dc dc Output, 10A Output,
- H3CR-A8 AC24-48/DC12-48 | Omron H3CR Series DIN Rail, Panel Mount Timer Relay, 12 → 48 V dc, 24 → 48V ac, 2-Contact, 0.05 s
- 52104571 | Lapp Cable Gland Adaptor, M20 Exterior Thread, M16 Interior Thread, Nickel Plated Brass, SKINDICHT Series
- 515015-601 | Latching Push Button Switch, IP67, Panel Mount
- Fluke LVD2 Non Contact Voltage Detector
- BD-02PMMS-LC7001 | Amphenol Industrial Circular Connector, 2 Contacts, Panel Mount, Plug, Male, IP67, Ceres Series
- RS PRO Type K Thermocouple 2m Length, 0.3mm Diameter → +600°C
