STMicroelectronics SCTW N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 4-Pin Hip-247

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RS 제품 번호:
230-0094P
제조사 부품 번호:
SCTWA60N120G2-4
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1.2kV

Series

SCTW

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

5.1mm

Height

21.1mm

Length

15.9mm

Automotive Standard

No

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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