onsemi NTMFS Type N-Channel MOSFET, 41.9 A, 150 V N, 8-Pin SO-8 NTMFS022N15MC
- RS 제품 번호:
- 229-6469
- 제조사 부품 번호:
- NTMFS022N15MC
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩18,424.00
마지막 RS 재고
- 최종적인 1,640 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩3,684.80 | ₩18,424.00 |
| 10 - 95 | ₩3,572.00 | ₩17,860.00 |
| 100 - 245 | ₩3,466.72 | ₩17,333.60 |
| 250 - 495 | ₩3,387.76 | ₩16,938.80 |
| 500 + | ₩3,316.32 | ₩16,581.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-6469
- 제조사 부품 번호:
- NTMFS022N15MC
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 41.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTMFS | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 80.6W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 6.3mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 41.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTMFS | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 80.6W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 6.3mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Minimize conduction losses
Minimize driver losses
Lowers switching noise/EMI
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