제조사부품번호

onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247

RS 제품 번호:: 229-6460P
제조사 부품 번호:: NTH4L045N065SC1
제조업체:: onsemi

onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247

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RS 제품 번호:: 229-6460P
제조사 부품 번호:: NTH4L045N065SC1
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	SiC Power
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	50mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	187W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22V
	Typical Gate Charge Qg @ Vgs	105nC
	Forward Voltage Vf	4.4V
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Height	22.74mm
	Standards/Approvals	No
	Width	5.2mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series SiC Power
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 50mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 187W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22V
	Typical Gate Charge Qg @ Vgs 105nC
	Forward Voltage Vf 4.4V
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Height 22.74mm
	Standards/Approvals No
	Width 5.2mm
	Automotive Standard No

Datasheet - NTH4L045N065SC1

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency

Faster operation frequency

Increased power density

Reduced EMI

Reduced system size

onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247

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