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onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

RS 제품 번호:: 229-6453P
제조사 부품 번호:: NTD360N65S3H
제조업체:: onsemi

onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

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Subtotal 10 units (supplied on a continuous strip)*

₩51,040.00

14,855 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
10 - 95	₩5,104.00
100 - 245	₩4,944.00
250 - 495	₩4,848.00
500 +	₩4,736.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 229-6453P
제조사 부품 번호:: NTD360N65S3H
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	SUPERFET III
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17.5nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Width	2.39mm
	Standards/Approvals	No
	Height	6.22mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series SUPERFET III
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17.5nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Width 2.39mm
	Standards/Approvals No
	Height 6.22mm
	Automotive Standard No

Datasheet - NTD360N65S3H

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features

• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m

• Internal Gate Resistance: 0.9

onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

대량 구매 가격 책정 옵션

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Features

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