Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3
- RS 제품 번호:
- 228-2909
- 제조사 부품 번호:
- SiR681DP-T1-RE3
- 제조업체:
- Vishay
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (3000 units, on reels of 3000)*
₩7,962,000.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩2,654.00 | ₩7,962,000.00 |
| 6000 - 27000 | ₩2,574.00 | ₩7,723,200.00 |
| 30000 + | ₩2,498.00 | ₩7,491,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 228-2909
- 제조사 부품 번호:
- SiR681DP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 71.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 69.4nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 71.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 69.4nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET P-channel is 80 V MOSFET.
100 % Rg and UIS tested
관련된 링크들
- Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3
- Vishay TrenchFET N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3