제조사부품번호

Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 228-2839
제조사 부품 번호:: SiHA5N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩57,525.00

추가로 2026년 6월 15일 부터 850 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩1,150.50	₩57,525.00
100 - 450	₩1,129.05	₩56,472.00
500 - 950	₩1,109.55	₩55,477.50
1000 - 1950	₩1,090.05	₩54,463.50
2000 +	₩1,070.55	₩53,488.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 228-2839
제조사 부품 번호:: SiHA5N80AE-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	29W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 29W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiHA5N80AE-GE3

Vishay Series E Power MOSFET, 850V Drain‑Source Voltage, 3A Maximum Continuous Drain Current - SiHA5N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial electronic systems. Supplied in a TO-220 through-hole package with three connections, it suits applications requiring discrete mounting and thermal management. The component operates across a wide temperature range and is constructed to meet RoHS standards.

Features and Benefits:

• 850V maximum drain voltage enables high-voltage switching
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion

What temperature range can it withstand during operation?

It is rated to operate down to -55°C and up to 150°C, permitting use in environments with wide thermal variation.

How does the package choice affect thermal management?

The TO-220 package offers a metal tab suitable for heatsinking, allowing improved heat extraction when mounted to an external cooler.

What gate-drive considerations are necessary for this device?

The gate should be driven within ±30V limits and sized to accommodate an 11nC typical gate charge to ensure reliable switching performance.

Is the device compliant with environmental substance restrictions?

It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.