Vishay EF Type N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-220
- RS 제품 번호:
- 225-9915
- 제조사 부품 번호:
- SIHP15N80AEF-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩121,542.00
마지막 RS 재고
- 최종적인 1,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 100 | ₩2,430.84 | ₩121,560.80 |
| 150 - 200 | ₩2,387.60 | ₩119,380.00 |
| 250 + | ₩2,344.36 | ₩117,218.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 225-9915
- 제조사 부품 번호:
- SIHP15N80AEF-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.52mm | |
| Standards/Approvals | No | |
| Width | 4.65 mm | |
| Height | 6.71mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.52mm | ||
Standards/Approvals No | ||
Width 4.65 mm | ||
Height 6.71mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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