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STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252 STD12N60DM6

RS 제품 번호:: 210-8740
제조사 부품 번호:: STD12N60DM6
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252 STD12N60DM6

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩15,265.60

일시적 품절

2026년 4월 27일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 620	₩3,053.12	₩15,265.60
625 - 1245	₩2,977.92	₩14,889.60
1250 +	₩2,932.80	₩14,664.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 210-8740
제조사 부품 번호:: STD12N60DM6
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	390mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	90W
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	2.4mm
	Standards/Approvals	No
	Width	6.2 mm
	Length	6.6mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 390mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 90W
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 2.4mm
	Standards/Approvals No
	Width 6.2 mm
	Length 6.6mm
	Automotive Standard AEC-Q101

Datasheet - STD12N60DM6

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-252 STD12N60DM6

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