Infineon IPD50R N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 222-4899
- 제조사 부품 번호:
- IPD50R800CEAUMA1
- 제조업체:
- Infineon
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 222-4899
- 제조사 부품 번호:
- IPD50R800CEAUMA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Forward Voltage Vf | 830mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Forward Voltage Vf 830mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
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