제조사부품번호

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 222-4899
제조사 부품 번호:: IPD50R800CEAUMA1
제조업체:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩1,090,400.00

재고있음

5,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2500 - 10000	₩436.16	₩1,090,870.00
12500 +	₩426.76	₩1,068,780.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4899
제조사 부품 번호:: IPD50R800CEAUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IPD50R
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.83V
	Typical Gate Charge Qg @ Vgs	12.4nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Height	2.41mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IPD50R
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.83V
	Typical Gate Charge Qg @ Vgs 12.4nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD50R800CEAUMA1

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

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