제조사부품번호

Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 217-2525
제조사 부품 번호:: IPD60R400CEAUMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

₩1,724,900.00

재고있음

2,500 개 단위 배송 준비 완료

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수량	한팩당	릴당*
2500 - 10000	₩689.96	₩1,726,310.00
12500 +	₩676.80	₩1,691,530.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2525
제조사 부품 번호:: IPD60R400CEAUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14.7A
	Maximum Drain Source Voltage Vds	600V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	400mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	9.4nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	41W
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14.7A
	Maximum Drain Source Voltage Vds 600V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 400mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 9.4nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 41W
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD60R400CEAUMA1

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

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