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Infineon IPA60R N-Channel MOSFET, 31 A, 1.2 kV Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1

RS 제품 번호:: 222-4874
제조사 부품 번호:: IPA60R099P7XKSA1
제조업체:: Infineon

Infineon IPA60R N-Channel MOSFET, 31 A, 1.2 kV Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1

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Subtotal (1 tube of 50 units)*

₩207,800.00

일시적 품절

2027년 3월 01일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 100	₩4,156.00	₩207,800.00
150 - 200	₩3,996.00	₩199,800.00
250 +	₩3,946.00	₩197,280.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4874
제조사 부품 번호:: IPA60R099P7XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	1.2kV
	Series	IPA60R
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	29W
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 1.2kV
	Series IPA60R
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 29W
	Forward Voltage Vf 900mV
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R099P7XKSA1

Infineon IPA60R Series MOSFET, 1200V Maximum Drain Source Voltage, 31A Maximum Continuous Drain Current - IPA60R099P7XKSA1

This MOSFET is a high-voltage switching transistor designed for N-channel enhancement-mode applications in power electronics. It operates across a wide temperature range and is supplied in a TO-220 package for surface mounting, offering a practical solution where high drain-source voltage handling and moderate continuous current are required.

Features and Benefits:

• 1200 V drain-source capability enables high-voltage switching
• 31 A continuous drain current supports substantial load currents
• 99 mΩ RDS(on) minimises conduction losses during operation
• 29 W power dissipation allows sustained thermal loading
• 30 V gate-source limit permits robust gate drive margins
• −55 °C to +150 °C operating range ensures wide temperature tolerance

Applications

• Suitable for industrial high-voltage switch circuits
• Ideal for power converters handling elevated voltages
• Used for motor drive stages requiring N-channel switching
• Can be used for inverter output stage designs
• Suitable for laboratory evaluation of high-voltage transistors

What package should I expect for mounting on a heatsink?

It is supplied in a TO-220 package suitable for mounting to heatsinks and surface attachment.

What gate voltage limits must I observe for reliable operation?

The maximum permissible gate-to-source voltage is 30 V, so drive voltages should remain within this value.

How does thermal stress affect continuous current capability?

The maximum continuous drain current is rated at 31 A and must be managed with appropriate cooling to remain within the 29 W power dissipation limit.

What environmental temperatures can it tolerate during operation?

The device can operate between −55 °C and +150 °C, accommodating a broad range of ambient and elevated conditions.