Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

RS 제품 번호:: 222-4850
제조사 부품 번호:: IMBF170R650M1XTMA1
제조업체:: Infineon

Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

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대량 구매 할인 받기

2000개 더 담고 ₩212,000.00 할인 받기

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Subtotal (1 reel of 1000 units)*

₩5,356,000.00

일시적 품절

2027년 11월 11일 부터 배송

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수량	한팩당	릴당*	절감
1000 - 1000	₩5,356.00	₩5,356,400.00	-
2000 - 2000	₩5,250.00	₩5,249,200.00	₩212,000.00
3000 +	₩5,144.00	₩5,144,200.00	₩636,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4850
제조사 부품 번호:: IMBF170R650M1XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.4A
	Maximum Drain Source Voltage Vds	1.7kV
	Package Type	TO-263
	Series	IMBF1
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	650mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	23V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	88W
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.4A
	Maximum Drain Source Voltage Vds 1.7kV
	Package Type TO-263
	Series IMBF1
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 650mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 23V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 88W
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMBF170R650M1XTMA1

Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 7.4A Continuous Drain Current - IMBF170R650M1XTMA1

This MOSFET is a high-voltage, N-channel enhancement device intended for power switching in demanding thermal environments. It is supplied in a TO-263 surface-mount package and is designed to handle elevated voltages and moderate continuous currents while operating across a wide temperature range.

Features and Benefits:

• 1700V drain-source rating for high-voltage switching applications
• 650mΩ Rds minimises conduction losses at low to moderate currents
• 88W power dissipation supports significant heat-handling capability
• 7.4A continuous drain current for sustained power delivery
• −55°C to 175°C operation covers harsh thermal environments
• 23V gate tolerance enables robust gate-drive margins

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive front ends
• Used for switch-mode power supplies in elevated temperature settings
• Can be used for line-side switching in power distribution
• Used with heat-sinking arrangements on surface-mounted boards

What mounting style does this component require?

It is supplied in a TO-263 package intended for surface mounting to a PCB with appropriate thermal land patterns.

What channel type and mode should designers expect?

The device uses an N-channel configuration and operates in enhancement mode for conventional gate-driven switching.

How does ambient temperature affect its suitability?

Its specified operating range from −55°C to 175°C permits use in environments with extreme cold and high thermal stress without derating beyond stated limits.

What is the maximum permitted gate-to-source voltage?

The maximum gate-source voltage is 23V, which defines the allowable gate-drive amplitude for safe operation.

Is this designed to automotive standards?

It is not specified as meeting automotive-grade standards and should not be assumed compliant with automotive qualification requirements.