제조사부품번호

Infineon IMBF1 N-Channel MOSFET, 5.2 A, 1.7 kV Enhancement, 7-Pin TO-263

RS 제품 번호:: 222-4849P
제조사 부품 번호:: IMBF170R1K0M1XTMA1
제조업체:: Infineon

Infineon IMBF1 N-Channel MOSFET, 5.2 A, 1.7 kV Enhancement, 7-Pin TO-263

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Subtotal 10 units (supplied on a continuous strip)*

₩85,200.00

178 개 단위 배송 준비 완료

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수량	한팩당
10 - 98	₩8,520.00
100 - 248	₩8,360.00
250 - 498	₩8,210.00
500 +	₩8,060.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4849P
제조사 부품 번호:: IMBF170R1K0M1XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	1.7kV
	Series	IMBF1
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	68W
	Maximum Gate Source Voltage Vgs	23V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 1.7kV
	Series IMBF1
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 68W
	Maximum Gate Source Voltage Vgs 23V
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMBF170R1K0M1XTMA1

Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 68W Power Dissipation - IMBF170R1K0M1XTMA1

This MOSFET is a high-voltage semiconductor device designed to control and switch power in surface-mounted assemblies. It operates as an N-channel enhancement-mode transistor, providing controlled conduction between drain and source for power-management applications across a wide temperature range.

Features and Benefits:

• 1700V rating enables operation in high-voltage circuits
• 5.2A continuous current supports moderate load currents
• 68W power dissipation allows sustained thermal handling
• 1Ω drain-source resistance limits conduction losses
• 23V gate tolerance permits substantial gate-drive voltage
• Surface-mount TO-263 package simplifies board assembly

Applications

• Suitable for high-voltage switching in industrial supplies
• Ideal for power-conversion stages requiring sustained dissipation
• Used with inverter front-ends handling elevated voltages
• Can be used for ruggedised controls across wide temperatures
• Suitable for Compact PCB power modules with surface-mount components

What temperature extremes can it tolerate during operation?

It is specified to operate from -55°C up to +175°C.

How many pins does the package present for layout planning?

The device is supplied in a 7-pin package for PCB footprint reference.

What mounting method is required for assembly?

It is intended for surface mounting in a TO-263 footprint.

What channel conduction type does it use for switching?

It employs an N-type channel in enhancement mode for controlled switching.

Is it designed to meet automotive standards?

It is not designated as compliant with automotive standards.