Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262 IRF3205ZLPBF
- RS 제품 번호:
- 214-4448
- 제조사 부품 번호:
- IRF3205ZLPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩20,210.00
마지막 RS 재고
- 최종적인 5,250 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩2,021.00 | ₩20,210.00 |
| 20 - 20 | ₩1,972.12 | ₩19,721.20 |
| 30 + | ₩1,940.16 | ₩19,401.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-4448
- 제조사 부품 번호:
- IRF3205ZLPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
It is lead-free
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205ZPBF
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- Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF
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- Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263
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