Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF

RS 제품 번호:: 178-1449
제조사 부품 번호:: IRF1010EPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 84 A, 60 V Enhancement, 3-Pin TO-220 IRF1010EPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩53,110.00

재고있음

추가로 2025년 12월 29일 부터 1,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 200	₩1,062.20	₩53,128.80
250 +	₩956.92	₩47,808.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-1449
제조사 부품 번호:: IRF1010EPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	84A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	130nC
	Maximum Power Dissipation Pd	200W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Height	8.77mm
	Length	10.54mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 84A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 130nC
	Maximum Power Dissipation Pd 200W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Height 8.77mm
	Length 10.54mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF

This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.

Features & Benefits

• Low RDS(on) contributes to minimal power loss at high currents

• High continuous drain current capability of up to 84A enhances efficiency

• Compact TO-220AB package allows for easy mounting

• Fast switching capabilities improve overall circuit performance

• Fully avalanche rated for added device protection

Applications

• Power supply circuits for efficient voltage regulation

• Motor control systems for precise operation

• Driver circuits in high current

• Signal amplification in electronic devices

What are the thermal resistance values for this product?

The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.

Can it operate safely in environments with high temperatures?

Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.

What type of current can it handle at high temperatures?

At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.

How does the gate charge affect its performance?

With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.