Infineon CoolMOS Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223
- RS 제품 번호:
- 222-4688
- 제조사 부품 번호:
- IPN80R2K4P7ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,404,360.00
재고있음
- 3,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩468.12 | ₩1,402,668.00 |
| 15000 + | ₩458.72 | ₩1,374,468.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4688
- 제조사 부품 번호:
- IPN80R2K4P7ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
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