제조사부품번호

Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1

RS 제품 번호:: 215-2532
제조사 부품 번호:: IPN80R3K3P7ATMA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩21,291.00

마지막 RS 재고

최종적인 2,825 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
25 - 725	₩851.64	₩21,300.40
750 - 1475	₩830.96	₩20,792.80
1500 +	₩817.80	₩20,454.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2532
제조사 부품 번호:: IPN80R3K3P7ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	800V
	Package Type	SOT-223
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5.8nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	6.1W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 800V
	Package Type SOT-223
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5.8nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 6.1W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN80R3K3P7ATMA1

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1

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