Infineon OptiMOS N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
- RS 제품 번호:
- 222-4667
- 제조사 부품 번호:
- IPD60N10S4L12ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
₩2,620,000.00
일시적 품절
- 2026년 12월 28일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩1,048.00 | ₩2,620,500.00 |
| 5000 - 5000 | ₩1,016.00 | ₩2,542,000.00 |
| 7500 + | ₩986.00 | ₩2,465,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4667
- 제조사 부품 번호:
- IPD60N10S4L12ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 60A Maximum Continuous Drain Current - IPD60N10S4L12ATMA1
This MOSFET is a high-voltage N-channel switch designed for demanding electronic power stages and automotive environments. It operates over a wide temperature range and is intended for surface-mount assemblies requiring robust switching performance and thermal handling.
Features and Benefits:
• 100 V drain rating enabling high-voltage switching capability
• 60 A continuous drain current supporting heavy current loads
• 12 mΩ Rds(on) reducing conduction losses in power paths
• 94 W power dissipation improving thermal endurance under load
• 38 nC typical gate charge allowing predictable switching energy
• 16 V maximum gate drive permitting flexible gate-voltage choices
• 60 A continuous drain current supporting heavy current loads
• 12 mΩ Rds(on) reducing conduction losses in power paths
• 94 W power dissipation improving thermal endurance under load
• 38 nC typical gate charge allowing predictable switching energy
• 16 V maximum gate drive permitting flexible gate-voltage choices
Applications
• Suitable for automotive power converters requiring AEC‑Q101 compliance
• Ideal for DC-DC converters in transport and industrial systems
• Used for motor-drive half-bridge stages in EV subsystems
• Can be used for synchronous rectification in power supplies
• Used with Compact surface-mount assemblies on thermal PCBs
• Ideal for DC-DC converters in transport and industrial systems
• Used for motor-drive half-bridge stages in EV subsystems
• Can be used for synchronous rectification in power supplies
• Used with Compact surface-mount assemblies on thermal PCBs
What temperature extremes can it withstand in operation?
It is specified to operate from −55 °C up to 175 °C, allowing use in high-temperature environments.
What packaging and mounting considerations apply for thermal management?
It is supplied in a TO‑252 surface-mount package that facilitates board-mounted heat dissipation and standard solder reflow attachment.
What gate-voltage limits should be observed to avoid device stress?
The maximum gate-to-source voltage is 16 V and gate-drive circuitry should not exceed this to prevent gate damage.
What channel conduction mode and type does it employ?
It uses an enhancement-mode N-channel configuration suitable for low-side and high-side switching when gate drive is appropriate.
관련된 링크들
- Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252
