Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1
- RS 제품 번호:
- 222-4640
- 제조사 부품 번호:
- IPA60R099P6XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩12,408.00
재고있음
- 898 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩6,204.00 | ₩12,408.00 |
| 10 - 98 | ₩6,100.60 | ₩12,201.20 |
| 100 - 248 | ₩5,987.80 | ₩11,975.60 |
| 250 - 498 | ₩5,875.00 | ₩11,750.00 |
| 500 + | ₩5,781.00 | ₩11,562.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4640
- 제조사 부품 번호:
- IPA60R099P6XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37.9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37.9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
관련된 링크들
- Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
- Infineon CoolMOS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1
- Infineon CoolMOS P6 Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R180C7XKSA1
- Infineon CoolMOS C6 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin TO-220 IPP60R099C6XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET, 8 A, 650 V Enhancement, 3-Pin TO-220 IPA65R190C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-220 IPA65R225C7XKSA1