제조사부품번호

Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1

RS 제품 번호:: 215-2482
제조사 부품 번호:: IPA65R125C7XKSA1
제조업체:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩34,216.00

재고있음

추가로 2025년 12월 29일 부터 345 개 단위 배송

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수량	한팩당	한팩당*
5 - 10	₩6,843.20	₩34,216.00
15 - 20	₩6,670.24	₩33,351.20
25 +	₩6,568.72	₩32,843.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2482
제조사 부품 번호:: IPA65R125C7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	CoolMOS C7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	32W
	Typical Gate Charge Qg @ Vgs	35nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series CoolMOS C7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 32W
	Typical Gate Charge Qg @ Vgs 35nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA65R125C7XKSA1

The Infineon’s Cool MOS™ C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1

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