Infineon OptiMOS-TM3 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ150N10LS3GATMA1
- RS 제품 번호:
- 222-4634
- 제조사 부품 번호:
- BSZ150N10LS3GATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩18,427.50
재고있음
- 9,580 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,842.75 | ₩18,427.50 |
| 20 - 90 | ₩1,795.95 | ₩17,959.50 |
| 100 - 240 | ₩1,751.10 | ₩17,511.00 |
| 250 - 490 | ₩1,706.25 | ₩17,062.50 |
| 500 + | ₩1,665.30 | ₩16,653.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4634
- 제조사 부품 번호:
- BSZ150N10LS3GATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | OptiMOS-TM3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series OptiMOS-TM3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
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