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Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

RS 제품 번호:: 222-4627
제조사 부품 번호:: BSZ028N04LSATMA1
제조업체:: Infineon

Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 15 units)*

₩17,202.00

재고있음

16,815 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
15 - 15	₩1,146.80	₩17,202.00
30 - 75	₩1,118.60	₩16,769.60
90 - 225	₩1,090.40	₩16,356.00
240 - 465	₩1,062.20	₩15,942.40
480 +	₩1,035.88	₩15,547.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4627
제조사 부품 번호:: BSZ028N04LSATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	114A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS-TM3
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	63W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Length	5.35mm
	Standards/Approvals	No
	Width	6.1 mm
	Height	1.2mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 114A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS-TM3
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 63W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Length 5.35mm
	Standards/Approvals No
	Width 6.1 mm
	Height 1.2mm
	Automotive Standard No

Datasheet - BSZ028N04LSATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

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