Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0804LSATMA1

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Subtotal (1 pack of 5 units)*

₩9,400.00

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한팩당*
5 - 5₩1,880.00₩9,400.00
10 - 95₩1,842.40₩9,212.00
100 - 245₩1,804.80₩9,024.00
250 - 495₩1,767.20₩8,836.00
500 +₩1,733.36₩8,666.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
234-6993
제조사 부품 번호:
BSZ0804LSATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

BSZ

Package Type

TSDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

12nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.1 mm

Height

1.2mm

Length

5.35mm

Automotive Standard

No

The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.

Logic level availability

Low on-state resistance RDS(on)

Low gate, output and reverse recovery charge

Excellent thermal behaviour

100% avalanche tested

Pb-free lead plating

Halogen-freeaccordingtoIEC61249-2-21

RoHS compliant

Available in 2 small standard packages

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