Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1
- RS 제품 번호:
- 214-8986
- 제조사 부품 번호:
- BSZ025N04LSATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 15 units)*
₩25,155.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 15 - 1245 | ₩1,677.00 | ₩25,155.00 |
| 1260 - 2490 | ₩1,634.10 | ₩24,511.50 |
| 2505 + | ₩1,608.75 | ₩24,141.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-8986
- 제조사 부품 번호:
- BSZ025N04LSATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness.
100% avalanche tested
Superior thermal resistance
Optimized for synchronous rectification
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