Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO

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Subtotal (1 reel of 2500 units)*

₩3,709,875.00

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2500 - 2500₩1,483.95₩3,709,875.00
5000 - 5000₩1,454.70₩3,635,775.00
7500 +₩1,425.45₩3,563,137.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
222-4623
제조사 부품 번호:
BSO604NS2XUMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

DSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

1.47mm

Length

4.9mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level

Enhancement Mode Green Product (RoHS compliant)

AEC Qualified

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