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Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1

RS 제품 번호:: 214-8977
제조사 부품 번호:: BSC0910NDIATMA1
제조업체:: Infineon

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩19,514.40

재고있음

4,960 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 1240	₩1,951.44	₩19,514.40
1250 - 2490	₩1,902.56	₩19,025.60
2500 +	₩1,872.48	₩18,724.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-8977
제조사 부품 번호:: BSC0910NDIATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	25V
	Series	OptiMOS
	Package Type	TISON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10 V
	Forward Voltage Vf	0.87V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	RoHS, IEC61249-2-21, JEDEC1
	Length	5mm
	Height	1.1mm
	Width	6 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 25V
	Series OptiMOS
	Package Type TISON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10 V
	Forward Voltage Vf 0.87V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals RoHS, IEC61249-2-21, JEDEC1
	Length 5mm
	Height 1.1mm
	Width 6 mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - BSC0910NDIATMA1

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.

Monolithic integrated Schottky-like diode

Optimized for high performance buck converters

100% avalanche tested

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1

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