Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

RS 제품 번호:: 222-4620
제조사 부품 번호:: BSC072N08NS5ATMA1
제조업체:: Infineon

Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (10 units, in packs of 10)*

₩25,300.00

10 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩2,530.00	₩25,300.00
20 - 90	₩2,486.00	₩24,860.00
100 - 240	₩2,440.00	₩24,400.00
250 - 490	₩2,396.00	₩23,960.00
500 +	₩2,354.00	₩23,540.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4620
제조사 부품 번호:: BSC072N08NS5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	OptiMOS-TM5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	69W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Width	6.1mm
	Standards/Approvals	No
	Length	5.35mm
	Height	1.2mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series OptiMOS-TM5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 69W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Width 6.1mm
	Standards/Approvals No
	Length 5.35mm
	Height 1.2mm
	Automotive Standard No

Datasheet - BSC072N08NS5ATMA1

Infineon OptiMOS-TM5 Series MOSFET, 80V Maximum Drain Source Voltage, 74A Maximum Continuous Drain Current - BSC072N08NS5ATMA1

This MOSFET is a high-current N-channel semiconductor designed for switching and power conversion in demanding thermal environments. It operates across a wide temperature span and accepts gate voltages up to 20 V, making it suitable for applications requiring robust gate drive and substantial continuous drain current while mounted as a Compact surface device.

Features and Benefits:

• 80 V drain rating enables higher-voltage switching applications
• 74 A continuous current supports heavy-load power stages
• 7.2 mΩ Rds(on) reduces conduction losses during operation
• 69 W power dissipation allows sustained thermal loading
• 24 nC typical gate charge for predictable switching behaviour
• 8-pin TDSON surface package provides Compact PCB real-estate savings

Applications

• Suitable for high-current motor drive stages
• Ideal for DC-DC converter output stages
• Used with power distribution modules in server racks
• Can be used for battery management and charging systems
• Used for synchronous rectification in power supplies

What thermal extremes can it tolerate during operation?

It is rated to operate from −55 °C up to 150 °C.

What gate drive voltage range is permissible for switching control?

The gate may be driven up to 20 V to switch the device.

How does the package support automated assembly?

It is supplied in an 8-pin TDSON package intended for surface mounting.

What is the typical switching charge to consider in gate drivers?

Designers should account for a typical total gate charge of 24 nC when selecting a driver.