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Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

RS 제품 번호:: 220-7355
제조사 부품 번호:: BSC061N08NS5ATMA1
제조업체:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩20,849.20

재고있음

4,970 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 1240	₩2,084.92	₩20,849.20
1250 - 2490	₩2,034.16	₩20,341.60
2500 +	₩2,000.32	₩20,003.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7355
제조사 부품 번호:: BSC061N08NS5ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	82A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	5.35mm
	Width	6.1 mm
	Height	1.2mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 82A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 5.35mm
	Width 6.1 mm
	Height 1.2mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC061N08NS5ATMA1

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for high performance SMPS ,e.g. sync.rec.

100%avalanchetested

Superior thermal resistance

N-channel

QualifiedaccordingtoJEDEC1)for target applications

Pb-free lead plating; RoHS compliant

Halogen-freeaccordingtoIEC61249-2-21

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

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