onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C
- RS 제품 번호:
- 221-6700
- 제조사 부품 번호:
- NTBGS1D5N06C
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩42,807.60
마지막 RS 재고
- 최종적인 800 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩8,561.52 | ₩42,807.60 |
| 10 - 95 | ₩8,305.84 | ₩41,529.20 |
| 100 - 245 | ₩8,053.92 | ₩40,269.60 |
| 250 - 495 | ₩7,813.28 | ₩39,066.40 |
| 500 + | ₩7,580.16 | ₩37,900.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6700
- 제조사 부품 번호:
- NTBGS1D5N06C
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS1D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 211W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS1D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 211W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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