제조사부품번호

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247

RS 제품 번호:: 220-7458
제조사 부품 번호:: IPW65R065C7XKSA1
제조업체:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩190,237.20

재고있음

210 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 120	₩6,341.24	₩190,254.12
150 +	₩6,215.28	₩186,441.48

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7458
제조사 부품 번호:: IPW65R065C7XKSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	145A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-247
	Series	CoolMOS C7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	171W
	Typical Gate Charge Qg @ Vgs	64nC
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Height	21.1mm
	Length	16.13mm
	Width	5.21 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 145A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-247
	Series CoolMOS C7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 171W
	Typical Gate Charge Qg @ Vgs 64nC
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Height 21.1mm
	Length 16.13mm
	Width 5.21 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW65R065C7XKSA1

The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

650V voltage

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Outstanding Cool MOS™ quality

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247

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