Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 109 A, 600 V, 3-Pin TO-247 IPW60R017C7XKSA1
- RS 제품 번호:
- 218-3085
- 제조사 부품 번호:
- IPW60R017C7XKSA1
- 제조업체:
- Infineon
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Subtotal (1 unit)*
₩27,090.80
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- 7 개 단위 배송 준비 완료
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|---|---|
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-3085
- 제조사 부품 번호:
- IPW60R017C7XKSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | 600V CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series 600V CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ series N-channel power MOSFET. The CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and high performance LLC)
Increased MOSFET dv/dt ruggedness to 120V/ns
Increased switching frequency
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