Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223
- RS 제품 번호:
- 220-7436
- 제조사 부품 번호:
- IPN60R600P7SATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,291,560.00
일시적 품절
- 2026년 7월 28일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩430.52 | ₩1,292,688.00 |
| 6000 - 9000 | ₩423.00 | ₩1,266,744.00 |
| 12000 + | ₩413.60 | ₩1,241,364.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7436
- 제조사 부품 번호:
- IPN60R600P7SATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-223 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 7W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-223 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 7W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).
Ease of use and fast design-in through low ringing tendency and usage
across PFC and PWM stages
Simplified thermal management due to low switching and conduction
losses
Increased power density solutions enabled by using product swith
smaller foot print and higher manufacturing quality due to>2kVESD
protection
Suitable for awide variety of applications and power ranges
관련된 링크들
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1
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