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Infineon CoolMOS P7 N-Channel MOSFET & Diode, 26 A, 650 V Enhancement, 3-Pin TO-220 IPA60R120P7XKSA1

RS 제품 번호:: 220-7367
제조사 부품 번호:: IPA60R120P7XKSA1
제조업체:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET & Diode, 26 A, 650 V Enhancement, 3-Pin TO-220 IPA60R120P7XKSA1

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Subtotal (1 tube of 50 units)*

₩170,700.00

추가로 2026년 10월 05일 부터 1,250 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩3,414.00	₩170,720.00
100 - 150	₩3,340.00	₩167,020.00
200 +	₩3,266.00	₩163,300.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7367
제조사 부품 번호:: IPA60R120P7XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	28W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 28W
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R120P7XKSA1

Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 78A Maximum Continuous Drain Current - IPA60R120P7XKSA1

This MOSFET & diode is a high-voltage power switching device designed for through-hole mounting in TO-220 packages, combining an N-channel enhancement-mode transistor with an integrated diode for use in demanding electronic power circuits. It is intended for applications that require substantial current capability and elevated temperature endurance, operating across a wide ambient temperature span.

Features and Benefits:

• 650V rating enables high-voltage switching in single device
• 78A continuous drain current supports heavy load handling
• 120mΩ low on-resistance reduces conduction losses
• 28W maximum power dissipation permits sustained power handling
• 0.9V forward diode voltage minimises diode conduction loss
• 30V gate-source limit allows standard gate drive voltages

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive switching stages
• Used with switch-mode power supplies requiring high current
• Can be used for power factor correction circuits
• Suitable for replacement in through-hole TO-220 designs

What thermal range can this component tolerate in operation?

It can operate from -55°C up to +150°C, enabling use in high-temperature environments.

What mounting method does it require for PCB assembly?

It is intended for through-hole mounting in a TO-220 package for secure mechanical and thermal attachment.

What channel and conduction mode does it use for switching?

The device uses an N-channel semiconductor configured in enhancement mode for standard gate-driven conduction.

Is it specified for automotive grade compliance?

It is not designated as meeting automotive standard classification.

How many pins does the package provide for electrical connection?

The package presents three pins for gate, drain and source connections.