Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

₩241,786.80

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  • 2026년 5월 25일 부터 배송
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한팩당
Per Tube*
30 - 60₩8,059.56₩241,803.72
90 - 120₩7,749.36₩232,497.72
150 +₩7,651.60₩229,564.92

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
219-6020
제조사 부품 번호:
IPW60R037CSFDXKSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

236A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS CSFD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

136nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

245W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

16.13mm

Height

5.21mm

Width

21.1 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

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