제조사부품번호

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1

RS 제품 번호:: 219-6005
제조사 부품 번호:: IPN95R1K2P7ATMA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩15,698.00

재고있음

2,870 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩1,569.80	₩15,698.00
20 - 90	₩1,543.48	₩15,434.80
100 - 240	₩1,504.00	₩15,040.00
250 - 490	₩1,466.40	₩14,664.00
500 +	₩1,430.68	₩14,306.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-6005
제조사 부품 번호:: IPN95R1K2P7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	950V
	Package Type	SOT-223
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	15nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Height	1.8mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 950V
	Package Type SOT-223
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 15nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Height 1.8mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPN95R1K2P7ATMA1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1

관련된 링크들