제조사부품번호

Infineon IPN N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1

RS 제품 번호:: 244-2273
제조사 부품 번호:: IPN95R3K7P7ATMA1
제조업체:: Infineon

Infineon IPN N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1

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Subtotal (5 units, in packs of 5)*

₩10,160.00

추가로 2026년 9월 28일 부터 235 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩2,032.00	₩10,160.00
10 - 95	₩1,984.00	₩9,920.00
100 - 245	₩1,928.00	₩9,640.00
250 - 495	₩1,892.00	₩9,460.00
500 +	₩1,836.00	₩9,180.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-2273
제조사 부품 번호:: IPN95R3K7P7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.1A
	Maximum Drain Source Voltage Vds	950V
	Package Type	SOT-223
	Series	IPN
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Length	2mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.1A
	Maximum Drain Source Voltage Vds 950V
	Package Type SOT-223
	Series IPN
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Length 2mm
	Automotive Standard AEC-Q101

Datasheet - IPN95R3K7P7ATMA1

Infineon IPN Series MOSFET, 950V Drain Source Voltage, 81W Power Dissipation - IPN95R3K7P7ATMA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mount applications where robust drain-source performance and wide temperature tolerance are required. It operates across a broad thermal range and is suitable for circuits demanding substantial power handling and gate-drive tolerance in Compact SOT-223 packaging.

Features and Benefits:

• 950V drain-source capability enabling high-voltage switching
• 3mΩ low on-resistance reducing conduction losses
• 6.1A continuous current supporting moderate load currents
• 81W power dissipation allowing sustained thermal performance
• 80nC typical gate charge facilitating predictable switching behaviour
• 20V gate tolerance permitting common gate-drive voltages

Applications

• Suitable for high-voltage power conversion stages
• Ideal for industrial motor drive front-ends
• Used for switch-mode power supply primary switching
• Can be used for automotive power systems requiring qualification
• Used with Compact surface-mount assemblies on heat-managed boards

What thermal extremes can it withstand in operation?

It is rated to operate from -55°C up to +150°C.

How many pins does the package present for PCB layout?

The device uses a three-pin configuration in SOT-223 format.

What forward conduction characteristic is relevant for low-voltage drop?

The typical forward voltage is 0.9V during conduction.

Is the device suitable for automotive qualification standards?

It meets AEC-Q101 requirements for automotive-grade use.

What environmental compliance is indicated for disposal and use?

It is RoHS-compliant.