Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1
- RS 제품 번호:
- 218-3047
- 제조사 부품 번호:
- IPD50R1K4CEAUMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩37,036.00
재고있음
- 1,950 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 600 | ₩740.72 | ₩37,064.20 |
| 650 - 1200 | ₩721.92 | ₩36,143.00 |
| 1250 + | ₩710.64 | ₩35,579.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-3047
- 제조사 부품 번호:
- IPD50R1K4CEAUMA1
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | 500V CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series 500V CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode N | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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