Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252

RS 제품 번호:: 168-5910
제조사 부품 번호:: IPD60R1K0CEAUMA1
제조업체:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

₩883,600.00

일시적 품절

2026년 4월 20일 부터 배송

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수량	한팩당	릴당*
2500 - 10000	₩353.44	₩885,480.00
12500 +	₩347.80	₩867,620.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 168-5910
제조사 부품 번호:: IPD60R1K0CEAUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.8A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS CE
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	13nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	61W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	2.41mm
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.8A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS CE
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 13nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 61W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 2.41mm
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1

This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits

• Reduction in switching and conduction losses enhances efficiency

• Robust body diode withstands hard commutation for increased reliability

• Low gate charge characteristics simplify driver requirements during operation

• Enhanced ESD robustness promotes durability in challenging environments

• Suitable for both hard and soft switching applications optimises performance

Applications

• Utilised in power factor correction stages for effective energy management

• Employed in hard switching PWM stages for efficient power conversion and control

• Integrates seamlessly within resonant switching stages across various device

• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?

Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?

Using ferrite beads on Gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?

The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?

For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.

What implications do the maximum ratings have for system design?

Understanding maximum ratings such as continuous drain current and voltage limits is Crucial in system design to avoid exceeding those thresholds, ensuring performance and reliability in applications.