Infineon 500V CoolMOS CE Type N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220 IPA50R950CEXKSA2
- RS 제품 번호:
- 218-2994
- 제조사 부품 번호:
- IPA50R950CEXKSA2
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 25 units)*
₩23,594.00
재고있음
- 275 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 100 | ₩943.76 | ₩23,612.80 |
| 125 + | ₩932.48 | ₩23,330.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-2994
- 제조사 부품 번호:
- IPA50R950CEXKSA2
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | 500V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Length | 16.15mm | |
| Height | 29.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series 500V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Length 16.15mm | ||
Height 29.75mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and
offering the best cost down performance ratio available on the market.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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