Infineon 500V CoolMOS CE Type N-Channel MOSFET, 7.6 A, 550 V N, 3-Pin TO-220
- RS 제품 번호:
- 218-2991
- 제조사 부품 번호:
- IPA50R800CEXKSA2
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩39,762.00
재고있음
- 400 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩795.24 | ₩39,724.40 |
| 100 - 150 | ₩770.80 | ₩38,521.20 |
| 200 + | ₩748.24 | ₩37,374.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-2991
- 제조사 부품 번호:
- IPA50R800CEXKSA2
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Series | 500V CoolMOS CE | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.75mm | |
| Width | 4.9 mm | |
| Length | 16.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 550V | ||
Series 500V CoolMOS CE | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 29.75mm | ||
Width 4.9 mm | ||
Length 16.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This MOSFET is used in PFC stages, hard switching PWM stages and resonant switching stages, for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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