Infineon BSP88 N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223

RS 제품 번호:: 218-2981
Distrelec 제품 번호:: 304-39-399
제조사 부품 번호:: BSP88H6327XTSA1
제조업체:: Infineon

Infineon BSP88 N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1000 units, on reels of 1000)*

₩364,000.00

일시적 품절

2026년 11월 19일 부터 1,000 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
1000 - 1000	₩364.00	₩364,800.00
2000 +	₩358.00	₩357,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 218-2981
Distrelec 제품 번호:: 304-39-399
제조사 부품 번호:: BSP88H6327XTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	240V
	Series	BSP88
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	4.5nC
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Standards/Approvals	No
	Height	1.8mm
	Width	3.7mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 240V
	Series BSP88
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 4.5nC
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Standards/Approvals No
	Height 1.8mm
	Width 3.7mm
	Automotive Standard AEC-Q101

Datasheet - BSP88H6327XTSA1

Infineon BSP88 Series MOSFET, 240V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP88H6327XTSA1

This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching and control in demanding environments. It operates across a wide temperature range suitable for automotive applications and provides enhancement-mode switching with gate protection suitable for typical control voltages.

Features and Benefits:

• 240V drain-source rating enables high-voltage switching capability
• 6Ω maximum Rds reduces conduction losses in low-current circuits
• 350mA continuous drain current supports moderate current loads
• 4.5nC typical gate charge allows Faster gate transitions
• 1.8W power dissipation accommodates moderate thermal loads
• 20V gate-source limit provides defined gate protection margin

Applications

• Suitable for automotive sensor Interface circuits
• Ideal for isolated high-voltage control stages
• Used with battery-management or auxiliary systems
• Can be used for board-level power sequencing
• Suitable for low-power motor driver control

What temperature span can it tolerate during operation?

The device is rated to operate from -55°C up to 150°C.

How is the device intended to be mounted on a PCB?

It is supplied in a SOT-223 package for surface-mount assembly.

What package pin count should designers expect?

There are four pins available for circuit connections.

What channel type and mode define its switching behaviour?

It is an N-channel device operating in enhancement mode.

Which automotive standard does it meet for qualification?

It complies with the AEC-Q101 automotive component standard.