Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF
- RS 제품 번호:
- 258-3992
- 제조사 부품 번호:
- IRL530NSTRLPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩11,938.00
재고있음
- 50 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩2,387.60 | ₩11,938.00 |
| 10 - 95 | ₩2,267.28 | ₩11,336.40 |
| 100 - 245 | ₩2,131.92 | ₩10,659.60 |
| 250 - 495 | ₩1,981.52 | ₩9,907.60 |
| 500 + | ₩1,823.60 | ₩9,118.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3992
- 제조사 부품 번호:
- IRL530NSTRLPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Distrelec Product Id | 304-40-548 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Distrelec Product Id 304-40-548 | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
관련된 링크들
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- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-263
