Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

₩152,280.00

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  • 최종적인 1,100 개 unit(s)이 배송 준비 됨
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한팩당
Per Tube*
25 - 25₩6,091.20₩152,298.80
50 - 75₩5,959.60₩148,990.00
100 +₩5,828.00₩145,681.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
217-2594
제조사 부품 번호:
IRF200P223
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

313W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

5.31 mm

Height

34.9mm

Length

15.87mm

Automotive Standard

No

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

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