제조사부품번호

Infineon CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 217-2562
제조사 부품 번호:: IPP65R150CFDAAKSA1
제조업체:: Infineon

Infineon CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩188,658.00

마지막 RS 재고

최종적인 900 개 unit(s)이 배송 준비 됨

수량	한팩당	Per Tube*
50 - 50	₩3,773.16	₩188,695.60
100 - 150	₩3,692.32	₩184,597.20
200 +	₩3,609.60	₩180,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2562
제조사 부품 번호:: IPP65R150CFDAAKSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	22.4A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	CoolMOS CFDA
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	15nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	195.3W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Width	5.21 mm
	Standards/Approvals	No
	Height	41.42mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 22.4A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series CoolMOS CFDA
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 15nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 195.3W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Width 5.21 mm
	Standards/Approvals No
	Height 41.42mm
	Automotive Standard AEC-Q101

Datasheet - IPP65R150CFDAAKSA1

The Infineon 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Compliant to AEC Q101 standard

Infineon CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220

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