Infineon CoolMOS CFDA Type N-Channel MOSFET, 22.4 A, 650 V Enhancement, 3-Pin TO-220 IPP65R150CFDAAKSA1

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Subtotal (1 pack of 5 units)*

₩34,573.20

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5 - 10₩6,914.64₩34,573.20
15 - 20₩6,741.68₩33,708.40
25 +₩6,636.40₩33,182.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
217-2563
제조사 부품 번호:
IPP65R150CFDAAKSA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

22.4A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CFDA

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

195.3W

Maximum Operating Temperature

150°C

Length

16.13mm

Width

5.21 mm

Standards/Approvals

No

Height

41.42mm

Automotive Standard

AEC-Q101

The Infineon 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Compliant to AEC Q101 standard

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