제조사부품번호

Infineon IPD Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2

RS 제품 번호:: 217-2519
제조사 부품 번호:: IPD50P04P413ATMA2
제조업체:: Infineon

Infineon IPD Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 20 units)*

₩39,360.00

추가로 2026년 10월 05일 부터 6,820 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 620	₩1,968.00	₩39,360.00
640 - 1240	₩1,920.00	₩38,380.00
1260 +	₩1,888.00	₩37,760.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2519
제조사 부품 번호:: IPD50P04P413ATMA2
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.3V
	Maximum Power Dissipation Pd	58W
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Series IPD
	Package Type TO-252
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.3V
	Maximum Power Dissipation Pd 58W
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPD50P04P413ATMA2

Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50P04P413ATMA2

This MOSFET is a P-channel enhancement device designed to control high currents in demanding environments, providing a semiconductor switch capable of handling substantial drain-source loads while tolerating wide temperature ranges.

Features and Benefits:

• 40V drain-source rating enables medium-voltage switching applications
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins

Applications

• Suitable for automotive power distribution modules
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies

What temperature range can it reliably operate within?

It is specified to operate from -55°C up to 175°C.

What package type and mounting method are used?

It is supplied in a TO-252 package intended for through-hole mounting.

How does the gate-charge figure affect switching design?

A 39nC gate charge indicates the gate-drive energy and influences driver sizing and switching losses.

Is it suitable for use in automotive electronic systems?

It conforms to the AEC‑Q101 automotive device standard for suitability in vehicle environments.

What is the maximum allowable gate-to-source voltage?

The maximum VGS rating is 20V.