Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2

RS 제품 번호:: 258-3869
제조사 부품 번호:: IPD90P04P405ATMA2
제조업체:: Infineon

Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2

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Subtotal (1 pack of 2 units)*

₩8,400.00

3,216 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩4,200.00	₩8,400.00
10 - 98	₩3,990.00	₩7,980.00
100 - 248	₩3,750.00	₩7,500.00
250 - 498	₩3,490.00	₩6,980.00
500 +	₩3,210.00	₩6,420.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3869
제조사 부품 번호:: IPD90P04P405ATMA2
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-90A
	Maximum Drain Source Voltage Vds	-40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	118nC
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1, RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -90A
	Maximum Drain Source Voltage Vds -40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 118nC
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1V
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1, RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD90P04P405ATMA2

Infineon IPD Series MOSFET, 40V Maximum Drain-Source Voltage, 125W Maximum Power Dissipation - IPD90P04P405ATMA2

This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in demanding environments. It operates across a wide temperature span and is suitable for high-current applications where low on-resistance and robust gate handling are required. The device meets automotive reliability standards and environmental directives for use in regulated sectors.

Features and Benefits:

• 4.7mΩ Rds(on) reduces conduction losses and improves efficiency
• 90A continuous drain current supports high-current switching loads
• 118nC typical gate charge enables predictable switching performance
• 20V maximum gate-source tolerance allows flexible gate drive margins
• 125W power dissipation manages high power in Compact assemblies

Applications

• Suitable for high-current DC power distribution stages
• Ideal for automotive power modules under AEC‑Q101 requirements
• Used with Compact heatsinking in surface-mount power designs
• Can be used for synchronous switching in power converters

What temperature range can it withstand in operation?

It operates from -55°C up to 175°C, allowing use in wide thermal environments.

How does package choice affect assembly?

The TO-252 package facilitates surface-mount placement and thermal conduction to PCB landings.

What standards and directives has it met?

It conforms to DIN IEC 68-1 and is RoHS compliant as indicated in the specifications.

What channel characteristics determine switching behaviour?

The device is P-type enhancement mode, which defines polarity and gate-driven conduction behaviour.