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Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

RS 제품 번호:: 217-2506
제조사 부품 번호:: IPB65R095C7ATMA2
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩36,772.80

재고있음

225 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
5 - 245	₩7,354.56	₩36,772.80
250 - 495	₩7,174.08	₩35,870.40
500 +	₩7,061.28	₩35,306.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2506
제조사 부품 번호:: IPB65R095C7ATMA2
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	129W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Operating Temperature	150°C
	Width	9.45 mm
	Standards/Approvals	No
	Height	4.57mm
	Length	10.31mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 129W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Operating Temperature 150°C
	Width 9.45 mm
	Standards/Approvals No
	Height 4.57mm
	Length 10.31mm
	Automotive Standard No

Datasheet - IPB65R095C7ATMA2

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Increased MOSFET dv/dt ruggedness

Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on)/package

Easy to use/drive

Pb-free plating, halogen free mold compound

Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

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