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Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56

RS 제품 번호:: 216-9701
제조사 부품 번호:: TSM220NB06CR
제조업체:: Taiwan Semiconductor

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩5,531,900.00

재고있음

5,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2500 - 2500	₩2,212.76	₩5,533,310.00
5000 - 7500	₩2,165.76	₩5,412,990.00
10000 +	₩2,116.88	₩5,292,670.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 216-9701
제조사 부품 번호:: TSM220NB06CR
제조업체:: Taiwan Semiconductor

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Taiwan Semiconductor
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PDFN56
	Series	TSM025
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	68W
	Typical Gate Charge Qg @ Vgs	23nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	1.1mm
	Standards/Approvals	WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21
	Length	6.2mm
	Width	4.2 mm
	Automotive Standard	No

	모두 선택
	브랜드 Taiwan Semiconductor
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 60V
	Package Type PDFN56
	Series TSM025
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 68W
	Typical Gate Charge Qg @ Vgs 23nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 1.1mm
	Standards/Approvals WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21
	Length 6.2mm
	Width 4.2 mm
	Automotive Standard No

Datasheet-TSM220NB06CR

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56

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